Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQA12P20
GET PRICE
RFQ
53,140
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ON Semiconductor MOSFET P-CH 200V 12.6A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 150W (Tc) P-Channel - 200V 12.6A (Tc) 470 mOhm @ 6.3A, 10V 5V @ 250µA 40nC @ 10V 1200pF @ 25V 10V ±30V
FQA22P10
GET PRICE
RFQ
30,040
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ON Semiconductor MOSFET P-CH 100V 24A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 150W (Tc) P-Channel - 100V 24A (Tc) 125 mOhm @ 12A, 10V 4V @ 250µA 50nC @ 10V 1500pF @ 25V 10V ±30V
FQA9P25
Per Unit
$1.09
RFQ
39,060
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 250V 10.5A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 150W (Tc) P-Channel - 250V 10.5A (Tc) 620 mOhm @ 5.25A, 10V 5V @ 250µA 38nC @ 10V 1180pF @ 25V 10V ±30V
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