Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQA8N90C-F109
Per Unit
$2.03
RFQ
23,680
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 8A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 240W (Tc) N-Channel - 900V 8A (Tc) 1.9 Ohm @ 4A, 10V 5V @ 250µA 45nC @ 10V 2080pF @ 25V 10V ±30V
FQA9N90-F109
Per Unit
$1.64
RFQ
66,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 8.6A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 240W (Tc) N-Channel - 900V 8.6A (Tc) 1.3 Ohm @ 4.3A, 10V 5V @ 250µA 72nC @ 10V 2700pF @ 25V 10V ±30V
Page 1 / 1