Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQA40N25
Per Unit
$1.72
RFQ
44,080
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 250V 40A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 280W (Tc) N-Channel - 250V 40A (Tc) 70 mOhm @ 20A, 10V 5V @ 250µA 110nC @ 10V 4000pF @ 25V 10V ±30V
FQA9N90C-F109
Per Unit
$1.75
RFQ
50,280
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 900V 9A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 280W (Tc) N-Channel - 900V 9A (Tc) 1.4 Ohm @ 4.5A, 10V 5V @ 250µA 58nC @ 10V 2730pF @ 25V 10V ±30V
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