Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQA12P20
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RFQ
53,140
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ON Semiconductor MOSFET P-CH 200V 12.6A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 150W (Tc) P-Channel - 200V 12.6A (Tc) 470 mOhm @ 6.3A, 10V 5V @ 250µA 40nC @ 10V 1200pF @ 25V 10V ±30V
FQA5N90_F109
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RFQ
18,660
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ON Semiconductor MOSFET N-CH 900V 5.8A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 185W (Tc) N-Channel - 900V 5.8A (Tc) 2.3 Ohm @ 2.9A, 10V 5V @ 250µA 40nC @ 10V 1550pF @ 25V 10V ±30V
FQA6N90C-F109
Per Unit
$1.71
RFQ
40,160
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ON Semiconductor MOSFET N-CH 900V 6A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 198W (Tc) N-Channel - 900V 6A (Tc) 2.3 Ohm @ 3A, 10V 5V @ 250µA 40nC @ 10V 1770pF @ 25V 10V ±30V
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