- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
50,720
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | ||
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59,220
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | |||
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55,140
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V |
