- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
45,840
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V | ||
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49,440
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V | |||
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63,140
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V |
