- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
19,440
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|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | |||
|
38,580
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|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | ||||
|
53,960
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|
Infineon Technologies | MOSFET N-CH 40V 209A | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 104W (Tc) | N-Channel | - | 40V | 209A (Tc) | 1.25 mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | 6904pF @ 25V | 4.5V, 10V | ±20V | ||||
|
GET PRICE |
34,720
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|
Infineon Technologies | MOSFET N-CH 40V 217A DIRECTFET | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 40V | 217A (Tc) | 1.2 mOhm @ 132A, 10V | 3.9V @ 150µA | 185nC @ 10V | 6680pF @ 25V | 6V, 10V | ±20V | |||
|
12,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 40V 217A DIRECTFET | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 40V | 217A (Tc) | 1.2 mOhm @ 132A, 10V | 3.9V @ 150µA | 185nC @ 10V | 6680pF @ 25V | 6V, 10V | ±20V | ||||
|
63,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 40V 217A DIRECTFET | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | 96W (Tc) | N-Channel | - | 40V | 217A (Tc) | 1.2 mOhm @ 132A, 10V | 3.9V @ 150µA | 185nC @ 10V | 6680pF @ 25V | 6V, 10V | ±20V |