1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF200B211
Per Unit
$0.60
RFQ
68,560
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 200V 12A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 200V 12A (Tc) 170 mOhm @ 7.2A, 10V 4.9V @ 50µA 23nC @ 10V 790pF @ 50V 10V ±20V
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