3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH8202TRPBF
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RFQ
44,160
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 25V 100A PQFN HEXFET®, StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 160W (Tc) N-Channel - 25V 47A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2.35V @ 150µA 110nC @ 10V 7174pF @ 13V 4.5V, 10V ±20V
IRFH8202TRPBF
Per Unit
$0.93
RFQ
23,040
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Infineon Technologies MOSFET N-CH 25V 100A PQFN HEXFET®, StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 160W (Tc) N-Channel - 25V 47A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2.35V @ 150µA 110nC @ 10V 7174pF @ 13V 4.5V, 10V ±20V
IRFH8202TRPBF
Per Unit
$0.39
RFQ
16,060
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 25V 100A PQFN HEXFET®, StrongIRFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 160W (Tc) N-Channel - 25V 47A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2.35V @ 150µA 110nC @ 10V 7174pF @ 13V 4.5V, 10V ±20V
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