Drain to Source Voltage (Vdss) :
146 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK16V60W,LVQ
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RFQ
28,220
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 139W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK16V60W,LVQ
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RFQ
23,400
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 139W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK16V60W,LVQ
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RFQ
79,580
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 139W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK12V60W,LVQ
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RFQ
70,320
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12V60W,LVQ
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RFQ
29,400
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12V60W,LVQ
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RFQ
19,600
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12Q60W,S1VQ
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RFQ
63,120
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12P60W,RVQ
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RFQ
51,480
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A DPAK DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12P60W,RVQ
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RFQ
74,240
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12P60W,RVQ
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RFQ
63,980
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK16A60W5,S4VX
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RFQ
77,200
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Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43nC @ 10V 1350pF @ 300V 10V ±30V
TK31J60W5,S1VQ
Per Unit
$4.13
RFQ
74,960
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-3P(N) DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 105nC @ 10V 3000pF @ 300V 10V ±30V
TK35N65W5,S1F
Per Unit
$3.89
RFQ
46,380
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 35A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel - 650V 35A (Ta) 95 mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115nC @ 10V 4100pF @ 300V 10V ±30V
TK31A60W,S4VX
Per Unit
$3.52
RFQ
40,260
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK31E60W,S1VX
Per Unit
$3.52
RFQ
58,160
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Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 230W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 88 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK20N60W,S1VF
Per Unit
$2.71
RFQ
63,760
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 165W (Tc) N-Channel - 600V 20A (Ta) 155 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V
TK16C60W,S1VQ
Per Unit
$2.50
RFQ
31,660
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 15.8A I2PAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 130W (Tc) N-Channel - 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK8Q60W,S1VQ
Per Unit
$1.04
RFQ
18,400
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Toshiba Semiconductor and Storage MOSFET N CH 600V 8A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 80W (Tc) N-Channel Super Junction 600V 8A (Ta) 500 mOhm @ 4A, 10V 3.7V @ 400µA 18.5nC @ 10V 570pF @ 300V 10V ±30V
TK6A60W,S4VX
Per Unit
$1.04
RFQ
47,680
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Toshiba Semiconductor and Storage MOSFET N CH 600V 6.2A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel Super Junction 600V 6.2A (Ta) 750 mOhm @ 3.1A, 10V 3.7V @ 310µA 12nC @ 10V 390pF @ 300V 10V ±30V
TK8P60W,RVQ
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RFQ
52,900
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Toshiba Semiconductor and Storage MOSFET N CH 600V 8A DPAK DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel Super Junction 600V 8A (Ta) 500 mOhm @ 4A, 10V 3.7V @ 400µA 18.5nC @ 10V 570pF @ 300V 10V ±30V
TK8P60W,RVQ
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RFQ
41,620
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Toshiba Semiconductor and Storage MOSFET N CH 600V 8A DPAK DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel Super Junction 600V 8A (Ta) 500 mOhm @ 4A, 10V 3.7V @ 400µA 18.5nC @ 10V 570pF @ 300V 10V ±30V
TK8P60W,RVQ
Per Unit
$0.56
RFQ
52,160
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Toshiba Semiconductor and Storage MOSFET N CH 600V 8A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel Super Junction 600V 8A (Ta) 500 mOhm @ 4A, 10V 3.7V @ 400µA 18.5nC @ 10V 570pF @ 300V 10V ±30V
TK16E60W5,S1VX
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RFQ
18,220
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 15.8A TO-220AB DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 130W (Tc) N-Channel - 600V 15.8A (Ta) 230 mOhm @ 7.9A, 10V 4.5V @ 790µA 43nC @ 10V 1350pF @ 300V 10V ±30V
TK31V60W,LVQ
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RFQ
39,660
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Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK31V60W,LVQ
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RFQ
13,600
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Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK31V60W,LVQ
Per Unit
$2.46
RFQ
50,780
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Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK20E60W,S1VX
Per Unit
$2.27
RFQ
35,920
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 165W (Tc) N-Channel - 600V 20A (Ta) 155 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V
TK12A60W,S4VX
Per Unit
$1.85
RFQ
42,100
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK7Q60W,S1VQ
Per Unit
$0.89
RFQ
15,120
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A IPAK-3 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel - 600V 7A (Ta) 600 mOhm @ 3.5A, 10V 3.7V @ 350µA 15nC @ 10V 490pF @ 300V 10V ±30V
TK10A60W,S4X
Per Unit
$0.89
RFQ
16,160
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Toshiba Semiconductor and Storage MOSFET N CH 600V 9.7A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 Full Pack TO-220 30W (Tc) N-Channel - 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 720pF @ 300V 10V ±30V
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