- Packaging :
- Operating Temperature :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
79,540
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 900V | 2.5A (Ta) | 6.4 Ohm @ 1.5A, 10V | 4V @ 1mA | 12nC @ 10V | 470pF @ 25V | 10V | ±30V | ||
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GET PRICE |
19,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 900V | 3A (Ta) | 4.3 Ohm @ 1.5A, 10V | 4V @ 1mA | 17nC @ 10V | 700pF @ 25V | 10V | ±30V | ||
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GET PRICE |
35,340
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 900V | 5A (Ta) | 2.5 Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | 1150pF @ 25V | 10V | ±30V | ||
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GET PRICE |
56,160
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|
Toshiba Semiconductor and Storage | X34 : SMALL LOW ON RESISTANCE NC | π-MOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200mW (Ta) | N-Channel | 30V | 100mA (Ta) | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | 2.5V, 4V | ±20V | ||
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43,740
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|
Toshiba Semiconductor and Storage | X34 : SMALL LOW ON RESISTANCE NC | π-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200mW (Ta) | N-Channel | 30V | 100mA (Ta) | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | 2.5V, 4V | ±20V | |||
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63,400
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|
Toshiba Semiconductor and Storage | X34 : SMALL LOW ON RESISTANCE NC | π-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200mW (Ta) | N-Channel | 30V | 100mA (Ta) | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | 2.5V, 4V | ±20V | |||
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GET PRICE |
53,020
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|
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (LF) TRANSISTO | π-MOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | N-Channel | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V | ||
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65,600
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|
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (LF) TRANSISTO | π-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | N-Channel | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V | |||
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60,140
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|
Toshiba Semiconductor and Storage | X34 PB-F CST3 FET (LF) TRANSISTO | π-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | N-Channel | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V |
