Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTN600N04T2
Per Unit
$14.41
RFQ
73,680
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 40V 600A SOT-227 GigaMOS™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 940W (Tc) N-Channel - 40V 600A (Tc) 1.05 mOhm @ 100A, 10V 3.5V @ 250µA 590nC @ 10V 40000pF @ 25V 10V ±20V
IXTN550N055T2
Per Unit
$18.25
RFQ
23,660
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 55V 550A SOT-227 GigaMOS™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 940W (Tc) N-Channel - 55V 550A (Tc) 1.3 mOhm @ 100A, 10V 4V @ 250µA 595nC @ 10V 40000pF @ 25V 10V ±20V
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