- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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51,320
One step to sell excess stocks.Or submit Qty to get quotes
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | - | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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19,220
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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25,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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73,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
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70,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 6A (Ta) | 1.7 Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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39,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V |
