3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4686DY-T1-GE3
GET PRICE
RFQ
67,900
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC TrenchFET®, WFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3W (Ta), 5.2W (Tc) N-Channel - 30V 18.2A (Tc) 9.5 mOhm @ 13.8A, 10V 3V @ 250µA 26nC @ 10V 1220pF @ 15V 4.5V, 10V ±20V
SI4686DY-T1-GE3
Per Unit
$0.93
RFQ
13,360
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC TrenchFET®, WFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3W (Ta), 5.2W (Tc) N-Channel - 30V 18.2A (Tc) 9.5 mOhm @ 13.8A, 10V 3V @ 250µA 26nC @ 10V 1220pF @ 15V 4.5V, 10V ±20V
SI4686DY-T1-GE3
Per Unit
$0.36
RFQ
44,780
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC TrenchFET®, WFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3W (Ta), 5.2W (Tc) N-Channel - 30V 18.2A (Tc) 9.5 mOhm @ 13.8A, 10V 3V @ 250µA 26nC @ 10V 1220pF @ 15V 4.5V, 10V ±20V
Page 1 / 1