Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.50
RFQ
73,700
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STMicroelectronics MOSFET N-CH 100V 52A H2PAK-2 STripFET™ F3 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 110W (Tc) N-Channel - 100V 52A (Tc) 20 mOhm @ 26A, 10V 2.5V @ 250µA 18.5nC @ 5V 1900pF @ 400V 5V, 10V ±20V
STH185N10F3-2
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RFQ
67,500
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STMicroelectronics MOSFET N-CH 100V 180A H2PAK-2 STripFET™ F3 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 315W (Tc) N-Channel - 100V 180A (Tc) 4.5 mOhm @ 60A, 10V 4V @ 250µA 114.6nC @ 10V 6665pF @ 25V 10V ±20V
STH185N10F3-2
Per Unit
$2.96
RFQ
53,180
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 100V 180A H2PAK-2 STripFET™ F3 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 315W (Tc) N-Channel - 100V 180A (Tc) 4.5 mOhm @ 60A, 10V 4V @ 250µA 114.6nC @ 10V 6665pF @ 25V 10V ±20V
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