Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$228.51
RFQ
70,360
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel 200V 9.4A (Tc) 490 mOhm @ 9.4A, 12V 4V @ 1mA 50nC @ 12V 12V ±20V
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Per Unit
$218.47
RFQ
64,020
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD Military, MIL-PRF-19500/614 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-257-3 TO-257 2W (Ta), 75W (Tc) N-Channel 100V 14.4A (Tc) 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V 12V ±20V
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