Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPI21N50C3XKSA1
Per Unit
$1.21
RFQ
64,020
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 560V 21A I2PAK CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 208W (Tc) N-Channel - 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 10V ±20V
IPI65R150CFDXKSA1
Per Unit
$1.15
RFQ
42,800
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 22.4A TO-262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 195.3W (Tc) N-Channel - 650V 22.4A (Tc) 150 mOhm @ 9.3A, 10V 4.5V @ 900µA 86nC @ 10V 2340pF @ 100V 10V ±20V
SPI07N60C3XKSA1
Per Unit
$0.67
RFQ
23,260
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 7.3A TO-262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 83W (Tc) N-Channel - 600V 7.3A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 27nC @ 10V 790pF @ 25V 10V ±20V
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