1 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3207WS
Per Unit
$16.07
RFQ
61,960
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 50A TO247 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 178W (Tc) N-Channel 650V 50A (Tc) 41 mOhm @ 32A, 8V 2.65V @ 700µA 42nC @ 8V 2197pF @ 400V 8V ±18V
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