Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPA21N50C3XKSA1
Per Unit
$1.19
RFQ
76,980
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 560V 21A TO220FP CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 34.5W (Tc) N-Channel - 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 10V ±20V
SPA20N60C3XKSA1
Per Unit
$2.55
RFQ
66,620
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 20.7A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 34.5W (Tc) N-Channel - 600V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 10V ±20V
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