Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPA126N10N3GXKSA1
Per Unit
$0.52
RFQ
22,740
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 35A TO220-FP OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 100V 35A (Tc) 12.6 mOhm @ 35A, 10V 3.5V @ 45µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
IRFR540ZPBF
Per Unit
$0.27
RFQ
32,860
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 35A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 91W (Tc) N-Channel - 100V 35A (Tc) 28.5 mOhm @ 21A, 10V 4V @ 50µA 59nC @ 10V 1690pF @ 25V 10V ±20V
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