Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPS65R1K0CEAKMA1
Per Unit
$0.16
RFQ
55,940
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 4.3A TO-251-3 CoolMOS™ CE Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251 37W (Tc) N-Channel - 650V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3nC @ 10V 328pF @ 100V 10V ±20V
IPU50R950CEAKMA2
Per Unit
$0.11
RFQ
41,860
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 500V 4.3A TO251 CoolMOS™ CE Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-251-3 Short Leads, IPak, TO-251AA PG-TO251 53W (Tc) N-Channel - 500V 4.3A (Tc) 950 mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5nC @ 10V 231pF @ 100V 13V ±20V
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