2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI47N10S33AKSA1
Per Unit
$0.62
RFQ
60,180
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 47A TO262-3 SIPMOS® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 175W (Tc) N-Channel - 100V 47A (Tc) 33 mOhm @ 33A, 10V 4V @ 2mA 105nC @ 10V 2500pF @ 25V 10V ±20V
IPB47N10S33ATMA1
Per Unit
$0.51
RFQ
21,960
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 47A TO263-3 SIPMOS® Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 175W (Tc) N-Channel - 100V 47A (Tc) 33 mOhm @ 33A, 10V 4V @ 2mA 105nC @ 10V 2500pF @ 25V 10V ±20V
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