Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCPF16N60
Per Unit
$1.58
RFQ
67,480
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 16A TO-220F SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F-3 37.9W (Tc) N-Channel - 600V 16A (Tc) 260 mOhm @ 8A, 10V 5V @ 250µA 70nC @ 10V 2250pF @ 25V 10V ±30V
FCP16N60
Per Unit
$2.40
RFQ
62,340
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 16A TO-220 SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 167W (Tc) N-Channel - 600V 16A (Tc) 260 mOhm @ 8A, 10V 5V @ 250µA 70nC @ 10V 2250pF @ 25V 10V ±30V
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