2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFB3006GPBF
Per Unit
$0.92
RFQ
45,720
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A TO220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel - 60V 195A (Tc) 2.5 mOhm @ 170A, 10V 4V @ 250µA 300nC @ 10V 8970pF @ 50V 10V ±20V
IRFS3006PBF
Per Unit
$2.87
RFQ
43,540
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 195A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 375W (Tc) N-Channel - 60V 195A (Tc) 2.5 mOhm @ 170A, 10V 4V @ 250µA 300nC @ 10V 8970pF @ 50V 10V ±20V
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