Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT60M80JVR
GET PRICE
RFQ
24,980
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 600V 55A SOT-227 POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 568W (Tc) N-Channel - 600V 55A (Tc) 80 mOhm @ 500mA, 10V 4V @ 5mA 870nC @ 10V 14500pF @ 25V 10V ±30V
IXFN130N30
Per Unit
$20.73
RFQ
35,180
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 300V 130A SOT-227B HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 700W (Tc) N-Channel - 300V 130A (Tc) 22 mOhm @ 500mA, 10V 4V @ 8mA 380nC @ 10V 14500pF @ 25V 10V ±20V
Page 1 / 1