- Part Status :
- Packaging :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
55,140
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|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | ||
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GET PRICE |
54,920
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|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | ||
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GET PRICE |
46,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | ||
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GET PRICE |
14,340
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | ||
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63,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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33,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V |
