3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF8113GPBF
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RFQ
43,460
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Infineon Technologies MOSFET N-CH 30V 17.2A 8-SO HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 17.2A (Ta) 5.6 mOhm @ 17.2A, 10V 2.2V @ 250µA 36nC @ 4.5V 2910pF @ 15V 4.5V, 10V ±20V
IRF8113PBF
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RFQ
48,720
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Infineon Technologies MOSFET N-CH 30V 17.2A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 17.2A (Ta) 5.6 mOhm @ 17.2A, 10V 2.2V @ 250µA 36nC @ 4.5V 2910pF @ 15V 4.5V, 10V ±20V
IRF8113
GET PRICE
RFQ
44,880
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 17.2A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 17.2A (Ta) 5.6 mOhm @ 17.2A, 10V 2.2V @ 250µA 36nC @ 4.5V 2910pF @ 15V 4.5V, 10V ±20V
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