Operating Temperature :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM6K514NU,LF
GET PRICE
RFQ
65,700
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K514NU,LF
Per Unit
$0.28
RFQ
47,880
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K514NU,LF
Per Unit
$0.09
RFQ
59,120
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K513NU,LF
GET PRICE
RFQ
58,640
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
SSM6K513NU,LF
Per Unit
$0.28
RFQ
69,920
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
SSM6K513NU,LF
Per Unit
$0.08
RFQ
25,000
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
Page 1 / 1