- Packaging :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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57,100
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | 1.8V, 8V | ±10V | ||
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76,420
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | 1.8V, 8V | ±10V | |||
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59,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | - | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | - | - |
