Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HUF76633P3
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RFQ
65,440
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ON Semiconductor MOSFET N-CH 100V 38A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 145W (Tc) N-Channel - 100V 39A (Tc) 35 mOhm @ 39A, 10V 3V @ 250µA 67nC @ 10V 1820pF @ 25V 4.5V, 10V ±16V
HUFA76633P3
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RFQ
51,480
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ON Semiconductor MOSFET N-CH 100V 38A TO-220AB UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 145W (Tc) N-Channel - 100V 39A (Tc) 35 mOhm @ 39A, 10V 3V @ 250µA 67nC @ 10V 1820pF @ 25V 4.5V, 10V ±16V
HUF76633P3-F085
Per Unit
$1.24
RFQ
71,200
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ON Semiconductor MOSFET N CH 100V 39A TO-220AB Automotive, AEC-Q101, UltraFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 145W (Tc) N-Channel - 100V 39A (Tc) 35 mOhm @ 39A, 10V 3V @ 250µA 67nC @ 10V 1820pF @ 25V 4.5V, 10V ±16V
HUF75332P3
Per Unit
$0.86
RFQ
63,540
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ON Semiconductor MOSFET N-CH 55V 60A TO-220AB UltraFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 145W (Tc) N-Channel - 55V 60A (Tc) 19 mOhm @ 60A, 10V 4V @ 250µA 85nC @ 20V 1300pF @ 25V 10V ±20V
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