- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
50,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V | ||
|
|
|
37,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V | |||
|
|
|
GET PRICE |
38,260
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V |
