Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTD6600N-1G
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RFQ
59,560
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ON Semiconductor MOSFET N-CH 100V 12A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.28W (Ta), 56.6W (Tc) N-Channel 100V 12A (Ta) 146 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 700pF @ 25V 5V ±20V
NTD6600N-001
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RFQ
37,360
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ON Semiconductor MOSFET N-CH 100V 12A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.28W (Ta), 56.6W (Tc) N-Channel 100V 12A (Ta) 146 mOhm @ 6A, 5V 2V @ 250µA 20nC @ 5V 700pF @ 25V 5V ±20V
NTD12N10-1G
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RFQ
77,900
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ON Semiconductor MOSFET N-CH 100V 12A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.28W (Ta), 56.6W (Tc) N-Channel 100V 12A (Ta) 165 mOhm @ 6A, 10V 4V @ 250µA 20nC @ 10V 550pF @ 25V 10V ±20V
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