- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
28,340
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Infineon Technologies | MOSFET P-CH 20V 2.5A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta), 2.5W (Tc) | P-Channel | - | 20V | 2.5A (Tc) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 15nC @ 10V | 270pF @ 20V | 4.5V, 10V | ±20V | ||
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GET PRICE |
53,400
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET P-CH 20V 2.5A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta), 2.5W (Tc) | P-Channel | - | 20V | 2.5A (Tc) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 15nC @ 10V | 270pF @ 20V | 4.5V, 10V | ±20V | ||
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GET PRICE |
14,500
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET P-CH 20V 2.5A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.6W (Ta), 2.5W (Tc) | P-Channel | - | 20V | 2.5A (Tc) | 250 mOhm @ 1A, 10V | 3V @ 250µA | 15nC @ 10V | 270pF @ 20V | 4.5V, 10V | ±20V |
