Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NP160N04TUG-E1-AY
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RFQ
28,400
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Renesas Electronics America MOSFET N-CH 40V 160A TO-263-7 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) TO-263-7 1.8W (Ta), 220W (Tc) N-Channel 40V 160A (Tc) 2 mOhm @ 80A, 10V 4V @ 250µA 270nC @ 10V 15750pF @ 25V 10V ±20V
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RFQ
75,740
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Renesas Electronics America MOSFET N-CH 40V 160A TO-263 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) TO-263-7 1.8W (Ta), 220W (Tc) N-Channel 40V 160A (Ta) 2 mOhm @ 80A, 10V 2.5V @ 250µA 270nC @ 10V 15750pF @ 25V 4.5V, 10V ±20V
NP109N055PUJ-E1B-AY
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RFQ
54,680
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Renesas Electronics America MOSFET N-CH 55V MP-25ZP/TO-263 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 1.8W (Ta), 220W (Tc) N-Channel 55V 110A (Ta) 3.2 mOhm @ 55A, 10V 4V @ 250µA 180nC @ 10V 10350pF @ 25V 10V ±20V
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RFQ
28,420
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Renesas Electronics America MOSFET N-CH 40V 110A TO-263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3 1.8W (Ta), 220W (Tc) N-Channel 40V 110A (Tc) 2.3 mOhm @ 55A, 10V 4V @ 250µA 270nC @ 10V 15750pF @ 25V 10V ±20V
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