3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
51,860
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 2.2A PS-8 U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 100V 2.2A (Ta) 180 mOhm @ 1.1A, 10V 2.3V @ 1mA 7.5nC @ 10V 360pF @ 10V 4.5V, 10V ±20V
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RFQ
55,880
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 40A SOP-8 ADV U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 20V 40A (Ta) 3.5 mOhm @ 20A, 4.5V 1.3V @ 200µA 32nC @ 5V 2900pF @ 10V 2.5V, 4.5V ±12V
TPC6006-H(TE85L,F)
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RFQ
68,700
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 3.9A VS6 2-3T1A U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel - 40V 3.9A (Ta) 75 mOhm @ 1.9A, 10V 2.3V @ 1mA 4.4nC @ 10V 251pF @ 10V 4.5V, 10V ±20V
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