4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$6.38
RFQ
43,080
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed 1000V, 65 MOHM, G3 SIC MOSFET C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V
AON6220
Per Unit
$0.33
RFQ
14,360
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CHANNEL 100V 48A 8DFN AlphaSGT™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSMD, Flat Leads 8-DFN (5x6) 113.5W (Tc) N-Channel - 100V 48A (Tc) 6.2 mOhm @ 20A, 10V 2.3V @ 250µA 95nC @ 10V 4525pF @ 50V 4.5V, 10V ±20V
C3M0065100J
Per Unit
$6.38
RFQ
22,380
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1000V 35A D2PAK-7 C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +15V, -4V
C3M0065100K
Per Unit
$6.38
RFQ
51,560
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed 1000V, 65 MOHM, G3 SIC MOSFET C3M™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) - TO-247-4 TO-247-4L 113.5W (Tc) N-Channel - 1000V 35A (Tc) 78 mOhm @ 20A, 15V 3.5V @ 5mA 35nC @ 15V 660pF @ 600V 15V +19V, -8V
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