Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH6R003NL,LQ
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RFQ
64,380
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Toshiba Semiconductor and Storage MOSFET N CH 30V 38A 8SOP U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 30V 38A (Tc) 6 mOhm @ 19A, 10V 2.3V @ 200µA 17nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPH6R003NL,LQ
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RFQ
46,820
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Toshiba Semiconductor and Storage MOSFET N CH 30V 38A 8SOP U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 30V 38A (Tc) 6 mOhm @ 19A, 10V 2.3V @ 200µA 17nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPH6R003NL,LQ
Per Unit
$0.20
RFQ
57,040
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Toshiba Semiconductor and Storage MOSFET N CH 30V 38A 8SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 30V 38A (Tc) 6 mOhm @ 19A, 10V 2.3V @ 200µA 17nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPH11006NL,LQ
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RFQ
48,800
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPH11006NL,LQ
Per Unit
$0.43
RFQ
14,600
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPH11006NL,LQ
Per Unit
$0.15
RFQ
13,420
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 34W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
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