Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
8 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH8318TR2PBF
GET PRICE
RFQ
24,060
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 21A 5X6 PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 120A (Tc) 3.1 mOhm @ 20A, 10V 2.35V @ 50µA 41nC @ 10V 3180pF @ 10V 4.5V, 10V ±20V
IRFH8318TR2PBF
GET PRICE
RFQ
12,120
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 21A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 120A (Tc) 3.1 mOhm @ 20A, 10V 2.35V @ 50µA 41nC @ 10V 3180pF @ 10V 4.5V, 10V ±20V
IRFH8318TRPBF
GET PRICE
RFQ
26,340
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 50A 5X6 PQFN HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 120A (Tc) 3.1 mOhm @ 20A, 10V 2.35V @ 50µA 41nC @ 10V 3180pF @ 10V 4.5V, 10V ±20V
IRFH8318TRPBF
Per Unit
$0.43
RFQ
20,600
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 50A 5X6 PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 120A (Tc) 3.1 mOhm @ 20A, 10V 2.35V @ 50µA 41nC @ 10V 3180pF @ 10V 4.5V, 10V ±20V
IRFH8318TRPBF
Per Unit
$0.15
RFQ
77,440
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 50A 5X6 PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 120A (Tc) 3.1 mOhm @ 20A, 10V 2.35V @ 50µA 41nC @ 10V 3180pF @ 10V 4.5V, 10V ±20V
IRFH8316TRPBF
GET PRICE
RFQ
30,720
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 27A PQFN5X6 HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 50A (Tc) 2.95 mOhm @ 20A, 10V 2.2V @ 50µA 59nC @ 10V 3610pF @ 10V 4.5V, 10V ±20V
IRFH8316TRPBF
Per Unit
$0.56
RFQ
49,200
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 27A PQFN5X6 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 50A (Tc) 2.95 mOhm @ 20A, 10V 2.2V @ 50µA 59nC @ 10V 3610pF @ 10V 4.5V, 10V ±20V
IRFH8316TRPBF
Per Unit
$0.20
RFQ
61,100
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 27A PQFN5X6 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 59W (Tc) N-Channel - 30V 27A (Ta), 50A (Tc) 2.95 mOhm @ 20A, 10V 2.2V @ 50µA 59nC @ 10V 3610pF @ 10V 4.5V, 10V ±20V
Page 1 / 1