25 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPCC8A01-H(TE12LQM
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RFQ
35,320
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 21A SBD 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 21A (Ta) 9.9 mOhm @ 10.5A, 10V 2.3V @ 1mA 20nC @ 10V 1900pF @ 10V 4.5V, 10V ±20V
TPCC8A01-H(TE12LQM
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RFQ
33,040
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 21A SBD 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 21A (Ta) 9.9 mOhm @ 10.5A, 10V 2.3V @ 1mA 20nC @ 10V 1900pF @ 10V 4.5V, 10V ±20V
TPCC8A01-H(TE12LQM
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RFQ
14,400
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 21A SBD 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 21A (Ta) 9.9 mOhm @ 10.5A, 10V 2.3V @ 1mA 20nC @ 10V 1900pF @ 10V 4.5V, 10V ±20V
TPCC8006-H(TE12LQM
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RFQ
15,080
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSVI-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8 mOhm @ 11A, 10V 2.3V @ 200µA 27nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
TPCC8005-H(TE12LQM
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RFQ
20,980
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
TPCC8005-H(TE12LQM
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RFQ
67,000
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12L,Q
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RFQ
20,880
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12L,Q
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RFQ
33,960
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12L,Q
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RFQ
72,520
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPN14006NH,L1Q
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RFQ
23,320
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Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 13A (Ta) 14 mOhm @ 6.5A, 10V 4V @ 200µA 15nC @ 10V 1300pF @ 30V 6.5V, 10V ±20V
TPN14006NH,L1Q
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RFQ
51,820
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Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 13A (Ta) 14 mOhm @ 6.5A, 10V 4V @ 200µA 15nC @ 10V 1300pF @ 30V 6.5V, 10V ±20V
TPN14006NH,L1Q
Per Unit
$0.17
RFQ
64,580
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Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 13A (Ta) 14 mOhm @ 6.5A, 10V 4V @ 200µA 15nC @ 10V 1300pF @ 30V 6.5V, 10V ±20V
TPCC8005-H(TE12LQM
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RFQ
75,780
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
42,020
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
32,140
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8002-H(TE12LQM
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RFQ
70,140
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
19,600
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
72,560
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPCC8001-H(TE12LQM
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RFQ
20,940
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 4.5V, 10V ±20V
TPN11006NL,LQ
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RFQ
43,920
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPN11006NL,LQ
Per Unit
$0.51
RFQ
70,700
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPN11006NL,LQ
Per Unit
$0.17
RFQ
41,740
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPCC8008(TE12L,QM)
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RFQ
69,580
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V
TPCC8008(TE12L,QM)
Per Unit
$0.64
RFQ
48,860
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V
TPCC8008(TE12L,QM)
Per Unit
$0.25
RFQ
22,960
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 25A 8TSON U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 30V 25A (Ta) 6.8 mOhm @ 12.5A, 10V 2.5V @ 1A 30nC @ 10V 1600pF @ 10V 4.5V, 10V ±25V
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