- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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65,140
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|
ON Semiconductor | MOSFET N-CH 150V 22A TO-3PF | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | SC-94 | TO-3PF | 102W (Tc) | N-Channel | 150V | 22A (Tc) | 90 mOhm @ 11A, 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | 10V | ±25V | ||
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33,940
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 13A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 102W (Tc) | N-Channel | 250V | 13A (Ta) | 250 mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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47,580
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|
Nexperia USA Inc. | MOSFET N-CH 30V 55A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 102W (Tc) | N-Channel | 30V | 55A (Tc) | 13 mOhm @ 10A, 10V | 3V @ 1mA | 44nC @ 10V | 1986pF @ 25V | 10V | ±16V | |||
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31,260
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|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | ||
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78,600
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|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
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25,940
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|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
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29,260
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|
Rohm Semiconductor | MOSFET N-CHANNEL 600V 35A TO3PF | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 102W (Tc) | N-Channel | 600V | 35A (Tc) | 102 mOhm @ 18.1A, 10V | 5V @ 1mA | 72nC @ 10V | 3000pF @ 25V | 10V | ±20V |
