3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
C3M0075120J
Per Unit
$6.32
RFQ
27,020
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1200V 30A D2PAK-7 C3M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.6W (Tc) N-Channel - 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +19V, -8V
TSM80N08CZ C0G
Per Unit
$0.94
RFQ
49,120
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 75V 80A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 113.6W (Tc) N-Channel - 75V 80A (Tc) 8 mOhm @ 40A, 10V 4V @ 250µA 91.5nC @ 10V 3905pF @ 30V 10V ±20V
Default Photo
Per Unit
$6.65
RFQ
21,480
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed 1200V, 75 MOHM, G3 SIC MOSFET ON C3M™ Active Tape & Reel (TR) SiC (Silicon Carbide Junction Transistor) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 113.6W (Tc) N-Channel - 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +15V, -4V
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