Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIR168DP-T1-GE3
Per Unit
$0.22
RFQ
37,560
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5W (Ta), 34.7W (Tc) N-Channel - 30V 40A (Tc) 4.4 mOhm @ 15A, 10V 2.4V @ 250µA 75nC @ 10V 2040pF @ 15V 4.5V, 10V ±20V
SIR422DP-T1-GE3
GET PRICE
RFQ
36,380
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5W (Ta), 34.7W (Tc) N-Channel - 40V 40A (Tc) 6.6 mOhm @ 20A, 10V 2.5V @ 250µA 48nC @ 10V 1785pF @ 20V 4.5V, 10V ±20V
SIR422DP-T1-GE3
Per Unit
$0.70
RFQ
21,900
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5W (Ta), 34.7W (Tc) N-Channel - 40V 40A (Tc) 6.6 mOhm @ 20A, 10V 2.5V @ 250µA 48nC @ 10V 1785pF @ 20V 4.5V, 10V ±20V
SIR422DP-T1-GE3
Per Unit
$0.27
RFQ
21,440
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 40V 40A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5W (Ta), 34.7W (Tc) N-Channel - 40V 40A (Tc) 6.6 mOhm @ 20A, 10V 2.5V @ 250µA 48nC @ 10V 1785pF @ 20V 4.5V, 10V ±20V
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