- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
47,120
One step to sell excess stocks.Or submit Qty to get quotes
|
NXP USA Inc. | MOSFET N-CH 110V 12.5A SOT186A | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 31.2W (Tc) | N-Channel | - | 110V | 12.5A (Tc) | 90 mOhm @ 9A, 10V | 4V @ 1mA | 21nC @ 10V | 635pF @ 25V | 10V | ±20V | ||
|
|
37,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 650V 8.7A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 31.2W (Tc) | N-Channel | - | 650V | 8.7A (Tc) | 420 mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | 10V | ±20V |
