Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M013A050H
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RFQ
59,900
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 500V 13A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 183W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 36nC @ 10V 1918pF @ 25V 10V ±30V
FQA65N06
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RFQ
68,580
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ON Semiconductor MOSFET N-CH 60V 72A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 183W (Tc) N-Channel - 60V 72A (Tc) 16 mOhm @ 36A, 10V 4V @ 250µA 65nC @ 10V 2410pF @ 25V 10V ±25V
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