Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN4R6-100XS,127
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RFQ
27,980
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NXP USA Inc. MOSFET N-CH 100V 70.4A TO-220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220F 63.8W (Tc) N-Channel 100V 70.4A (Tc) 4.6 mOhm @ 15A, 10V 4V @ 1mA 153nC @ 10V 9900pF @ 50V 10V ±20V
PSMN5R0-100XS,127
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RFQ
18,380
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NXP USA Inc. MOSFET N-CH 100V 67.5A TO-220F - Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 Full Pack, Isolated Tab TO-220F 63.8W (Tc) N-Channel 100V 67.5A (Tc) 5 mOhm @ 15A, 10V 4V @ 1mA 153nC @ 10V 9900pF @ 50V 10V ±20V
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