Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTT12N140
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RFQ
40,140
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 1400V 12A TO268 - Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 890W (Tc) N-Channel - 1400V 12A (Tc) 2 Ohm @ 6A, 10V 4.5V @ 250µA 106nC @ 10V 3720pF @ 25V 10V ±20V
APT14050JVFR
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RFQ
29,620
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Microsemi Corporation MOSFET N-CH 1400V 23A SOT-227 POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 694W (Tc) N-Channel - 1400V 23A (Tc) 500 mOhm @ 11.5A, 10V 4V @ 5mA 820nC @ 10V 13500pF @ 25V 10V ±30V
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