- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
20 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
25,620
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|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
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34,320
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|
Microsemi Corporation | MOSFET N-CH 1200V 116A SP6 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 3290W (Tc) | N-Channel | - | 1200V | 116A (Tc) | 120 mOhm @ 58A, 10V | 5V @ 20mA | 1100nC @ 10V | 28900pF @ 25V | 10V | ±30V | |||
|
|
74,400
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|
Microsemi Corporation | MOSFET N-CH 1200V 116A SP6 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 3290W (Tc) | N-Channel | - | 1200V | 116A (Tc) | 120 mOhm @ 58A, 10V | 5V @ 20mA | 1100nC @ 10V | 28900pF @ 25V | 10V | ±30V | |||
|
|
GET PRICE |
25,540
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|
Infineon Technologies | MOSFET N-CH 30V 116A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
GET PRICE |
78,320
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|
Infineon Technologies | MOSFET N-CH 30V 116A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
GET PRICE |
25,760
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|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
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|
|
GET PRICE |
56,860
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
GET PRICE |
61,980
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|
Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
GET PRICE |
76,360
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|
ON Semiconductor | MOSFET N-CH 40V 116A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 150W (Tc) | N-Channel | - | 40V | 116A (Tc) | 5.8 mOhm @ 40A, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | 5V, 10V | ±20V | ||
|
|
|
GET PRICE |
50,200
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|
ON Semiconductor | MOSFET N-CH 40V 116A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 150W (Tc) | N-Channel | - | 40V | 116A (Tc) | 5.8 mOhm @ 40A, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | 5V, 10V | ±20V | ||
|
|
|
36,560
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 40V 116A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 150W (Tc) | N-Channel | - | 40V | 116A (Tc) | 5.8 mOhm @ 40A, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | 5V, 10V | ±20V | |||
|
|
|
68,240
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 40V 116A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 150W (Tc) | N-Channel | - | 40V | 116A (Tc) | 5.8 mOhm @ 40A, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | 5V, 10V | ±20V | |||
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|
|
GET PRICE |
17,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
GET PRICE |
73,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
35,040
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
|
29,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
GET PRICE |
42,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | ||
|
|
|
51,980
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | |||
|
|
|
32,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | |||
|
|
|
48,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 30V 116A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 180W (Tc) | N-Channel | - | 30V | 116A (Tc) | 7 mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | 4.5V, 10V | ±16V |
