- Part Status :
- Technology :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
-
- 10.5 mOhm @ 60A, 10V (1)
- 100 mOhm @ 20A, 20V (2)
- 100 mOhm @ 23A, 10V (2)
- 11.6 mOhm @ 33A, 10V (1)
- 110 mOhm @ 24A, 10V (3)
- 130 mOhm @ 22A, 10V (2)
- 240 mOhm @ 20A, 10V (2)
- 34 mOhm @ 25A, 10V (2)
- 35 mOhm @ 25A, 10V (4)
- 45 mOhm @ 25A, 10V (13)
- 55 mOhm @ 25A, 10V (2)
- 65 mOhm @ 15.9A, 10V (3)
- 70 mOhm @ 25A, 10V (1)
- 72 mOhm @ 15A, 10V (1)
- 9 mOhm @ 10A, 10V (4)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
43 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
46,920
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|
NXP USA Inc. | MOSFET N-CH 100V 41A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 34 mOhm @ 25A, 10V | 2V @ 1mA | - | 3573pF @ 25V | 4.5V, 10V | ±10V | ||
|
|
GET PRICE |
33,740
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|
Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | - | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||
|
|
GET PRICE |
57,680
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
GET PRICE |
54,340
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
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|
|
59,560
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|
IXYS | MOSFET N-CH 250V 41A TO-247A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 300W (Tc) | N-Channel | - | 250V | 41A (Tc) | 72 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3200pF @ 25V | 10V | ±20V | |||
|
|
GET PRICE |
61,140
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|
Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
31,660
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|
Infineon Technologies | MOSFET N-CH 150V 41A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
|
GET PRICE |
73,580
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|
Infineon Technologies | MOSFET N-CH 150V 41A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
|
GET PRICE |
55,920
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | ||
|
|
GET PRICE |
17,940
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|
Nexperia USA Inc. | MOSFET N-CH 100V 41A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 35 mOhm @ 25A, 10V | 4V @ 1mA | - | 2535pF @ 25V | 10V | ±20V | ||
|
|
23,840
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|
IXYS | MOSFET N-CH 500V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 400W (Tc) | N-Channel | - | 500V | 41A (Tc) | 110 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | 10V | ±20V | |||
|
|
|
59,500
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|
IXYS | MOSFET N-CH 500V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 400W (Tc) | N-Channel | - | 500V | 41A (Tc) | 110 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | 8000pF @ 25V | 10V | ±20V | |||
|
|
24,680
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|
IXYS | MOSFET N-CH 600V 41A ISOPLUS264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | ISOPLUS264™ | 500W (Tc) | N-Channel | - | 600V | 41A (Tc) | 130 mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | 10V | ±20V | |||
|
|
45,120
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|
Microsemi Corporation | MOSFET N-CH 500V 41A SOT227 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 378W (Tc) | N-Channel | - | 500V | 41A (Tc) | 100 mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | 4360pF @ 25V | 10V | ±30V | |||
|
|
|
51,660
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|
IXYS | MOSFET N-CH 600V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 500W (Tc) | N-Channel | - | 600V | 41A (Tc) | 130 mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | 10V | ±20V | |||
|
|
|
26,680
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | |||
|
|
|
60,040
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|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 12nC @ 10V | 660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
GET PRICE |
37,360
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
GET PRICE |
22,640
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|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
GET PRICE |
71,580
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|
Nexperia USA Inc. | MOSFET N-CH 100V 41A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 149W (Tc) | N-Channel | - | 100V | 41A (Tc) | 34 mOhm @ 25A, 10V | 2V @ 1mA | - | 3573pF @ 25V | 4.5V, 10V | ±10V | ||
|
|
GET PRICE |
25,440
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|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
24,840
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
|
72,200
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|
ON Semiconductor | MOSFET N-CHANNEL 40V 41A 8WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 30W (Tc) | N-Channel | - | 40V | 41A (Tc) | 9 mOhm @ 10A, 10V | 2.2V @ 20µA | 5.5nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
GET PRICE |
67,780
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|
Vishay Siliconix | MOSFET N-CH 100V 41A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 230W (Tc) | N-Channel | - | 100V | 41A (Tc) | 55 mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | 10V | ±20V | ||
|
|
54,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET N-CH 1200V 41A D3PAK | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 273W (Tc) | N-Channel | - | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
|
|
GET PRICE |
49,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | 2260pF @ 25V | 10V | ±30V | ||
|
|
|
20,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 150V 41A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta) | N-Channel | - | 150V | 41A (Tc) | 45 mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | 10V | ±30V | |||
|
|
41,880
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|
Microsemi Corporation | MOSFET N-CH 800V 41A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 800V | 41A (Tc) | 240 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 10V | ±30V | |||
|
|
|
72,160
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|
IXYS | MOSFET N-CH 600V 38A I4-PAC-5 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 (3 Leads) | ISOPLUS i4-PAC™ | - | N-Channel | Super Junction | 600V | 41A (Tc) | 70 mOhm @ 25A, 10V | 3.9V @ 3mA | 250nC @ 10V | - | 10V | ±20V | |||
|
|
|
28,040
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 500V 41A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 400W (Tc) | N-Channel | - | 500V | 41A (Tc) | 110 mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | 7000pF @ 25V | 10V | ±20V |
