- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
15 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
63,700
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|
ON Semiconductor | MOSFET N-CH 30V 9.3A 8SOIC | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | 30V | 9.3A (Ta) | 18 mOhm @ 9.3A, 10V | 3V @ 250µA | 17nC @ 5V | 1160pF @ 15V | 4.5V, 10V | ±20V | ||
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33,340
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|
ON Semiconductor | MOSFET N-CH 30V 52A U8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 820mW (Ta), 25.5W (Tc) | N-Channel | 30V | 9.3A (Ta) | 5.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | 4.5V, 10V | ±20V | |||
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52,940
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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GET PRICE |
37,440
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|
ON Semiconductor | MOSFET N-CH 30V 52A U8FL | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 820mW (Ta), 25.5W (Tc) | N-Channel | 30V | 9.3A (Ta) | 5.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | 4.5V, 10V | ±20V | ||
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|
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61,940
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|
ON Semiconductor | MOSFET N-CH 30V 52A U8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 820mW (Ta), 25.5W (Tc) | N-Channel | 30V | 9.3A (Ta) | 5.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | 4.5V, 10V | ±20V | |||
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|
|
23,300
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|
ON Semiconductor | MOSFET N-CH 30V 52A U8FL | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 820mW (Ta), 25.5W (Tc) | N-Channel | 30V | 9.3A (Ta) | 5.9 mOhm @ 30A, 10V | 2.2V @ 250µA | 18.2nC @ 10V | 1113pF @ 15V | 4.5V, 10V | ±20V | |||
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|
GET PRICE |
12,120
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | ||
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47,260
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
|
36,100
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
GET PRICE |
38,720
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|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V | ||
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47,140
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|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V | |||
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|
|
47,180
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|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V | |||
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|
|
GET PRICE |
79,300
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V | ||
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|
|
70,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V | |||
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|
|
52,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Diodes Incorporated | MOSFET N-CH 12V 9.3A SC59 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 680mW (Ta) | N-Channel | 12V | 9.3A (Ta) | 10 mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2426pF @ 10V | 1.2V, 2.5V | ±8V |
