- Packaging :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
52,300
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|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
|
GET PRICE |
48,880
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|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
|
GET PRICE |
31,040
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|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | |||
|
GET PRICE |
33,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V |