4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE836DF-T1-E3
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RFQ
52,300
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
48,880
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
31,040
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Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
SIE836DF-T1-GE3
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RFQ
33,000
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 200V 18.3A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (SH) 5.2W (Ta), 104W (Tc) N-Channel - 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 10V ±30V
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